The IEEE San Francisco Bay Area Nanotechnology Council invites you to its October noon-time seminar featuring the enablement of Graphene Devices. Join in for the networking and nanotechnology news.
(Graphene is a single layer of Graphite and is metallic, Graphane is fully hydrogenated Graphene and is semiconducting, Graphone is partially hydrogenated Graphene and is thought to be ferromagnetic - see http://capt.pku.edu.cn/Pub/09/09-010.pdf)
Tuesday - October 20, 2009Seminar
Opportunities and Challenges with Graphene Production and Application
Xiaogan Liang, Ph.D
Nanofabrication Facility, LawrenceBerkeleyNational Laboratory
Date: Tuesday October 20, 2009
Time: Registration & light lunch 11:30am. Presentation & Q/A 12:00 to 1pm
Location: National Semiconductor Bldg E-1 CMA Room. 2900 Semiconductor Drive, Santa Clara, CA
Cost: IEEE Members and Students $5. Non-Members $10
Please RSVP at our web site:www.ieee.org/nano
Recently, graphene has been extensively studied as a material for making future electronic device. In comparison with conventional semiconductors graphene exhibits exceptional properties, such as pronounced ambipolar effect, high carrier mobility, a stable 2D crystal structure, and potential to realize ballistic transport at room temperature. In comparison with other graphitic nanostructures (e.g. nanotube and fullerene), graphene is more compatible with state-of-the-art silicon technology. Potential electrical and electronic applications include bio/chemical sensors, semiconductor devices, transparent conductors, and energy conversion/storage devices, etc.
However, two of the challenges for scale-up applications are incorporating graphene over large areas and patterning nanostructures to achieve desirable electronic characteristics. Several approaches have been attempted to produce graphene for large area electronics, including epitaxial growth on catalytic metals, thermal decomposition of SiC, solution-based deposition, and mechanical cleavage, etc. At the same time, efforts have been made to tailor graphene sheets into nanoscale features (e.g. nanoribbons). At LBNL, we developed a novel nanotransfer-printing route to address these two challenges simultaneously. With this method, we have successfully demonstrated the printing of graphene features ranging from 18 nm to 100 µm. Furthermore, working transistors have been fabricated by using the patterned graphene nanolines. Such a method could be used for constructing graphene-based integrated circuits and quantum devices in the future.
Dr. Xiaogan Liang is currently working at The Molecular Foundry, Nanofabrication Facility, Lawrence Berkeley National Laboratory. His current research interests are focused on nanoimprint lithography, graphene-based electronics, nanofluidics, block copolymer self-assembly, and photovoltaics. Dr. Liang has coauthored 16 journal publications and more than 15 conference presentations, and has 4 pending patents. Xiaogan Liang is the member of Sigma Xi and IEEE.
Dr. Liang obtained a BS in Physics from Peking University, a MS in Condensed Matter Physics from Chinese Academyof Sciences, and a Ph.D. in Electrical Engineering from Princeton University.